QEEE Session on
BJT, MOSFET & Amplifiers - Analog Electronic Circuits
6, 9 & 13 March 2018
QEEE session on "BJT, MOSFET & Amplifiers - Analog Electronic Circuits" was conducted at Dronacharya Group of Institutions, Greater Noida by IIT, Madras under the initiative of learning through Information and Communication Technology (I.C.T). The sessions were scheduled on 6th March, 9th March and 13th March 2018. Prof. Hitesh Shrimali (IIT, Mandi) was the resource person in this program. The students of ECE II Year, accompanied by their faculty coordinator Ms. Prity Yadav (Assistant Professor, Department of ECE) attended the session.
Day 1: 6 - March - 2018
The first session started with the lecture on Bipolar Junction Transistor (BJT), Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and their Transfer Characteristics by Prof. Hitesh Shrimali . Prof. Shrimali explained the Two Port Network and its impedance and admittance parameters. He also focused on the Voltage and Current relations of all four terminals (Source, Drain, Gate & Base).
Day 2 : 9 - March - 2018
Prof. Shrimali delivered a lecture on DC Analysis of Bipolar Junction Transistor (BJT) and its Emitter Degeneration configuration. He then explained Common Emitter, Common Base, Common Collector configurations. He also explained DC Biasing of MOS transistor, Single Transistor Amplifier, Diode Configured MOS, Resistive Load Configuration and the Source Degeneration Configuration.
Day 3: 13 - March - 2018
Prof. Shrimali discussed Single Ended, Pseudo Differential and Full Differential Configurations. He also explained Differential Noise Elimination Circuit and its uses. He then discussed Common Mode Voltage & Common Mode Rejection Ratio of different configurations. Prof. Shrimali concluded the session with the discussion on Current Sources.